p p j q547 8 august 1 8 ,2015 - rev.00 page 1 10 0 v n - c hannel enhancement mode mosfet v oltage 10 0 v c urrent 60 a dfn5060 - 8l f eatures ? rds(on) , vgs@ 10 v , id@ 3 0 a< 12 m ? ? advanced trench process technology ? high density cell design for ultra low on - resistance ? lead free in compliance with eu rohs 2011/65/eu directive ? green molding compound as per iec61249 std. (halogen free) m echanical data ? case: dfn5060 - 8l package ? terminals: solderable per mil - std - 750, method 2026 ? approx. weight: 0.0028 ounces, 0.08 grams ? marking: q54 7 8 m aximum r atings and t hermal c haracteristics (t a =25 o c unless otherwise noted) parameter symbol limit units drain - source voltage v ds 100 v gate - source voltage v gs + 2 0 v continuous drain current t c =25 o c i d 60 a t c = 100 o c 38 pulsed drain current (note 1 ) t c =25 o c i dm 150 power dissipation t c =25 o c p d 83 w t c = 100 o c 33 continuous drain current t a =25 o c i d 9 a t a = 70 o c 7.5 a power dissipation t a =25 o c p d 2.0 w t a = 70 o c 1.3 single pulse avalanche energy (note 6 ) e as 156 mj operating junction and storage temperature range t j ,t stg - 55~1 50 o c typical thermal r esistance (note 4, 5 ) junction to case r jc o c /w j unction to ambient r ja 6 2 .5 ? limited only by maximum junction temperature
p p j q547 8 august 1 8 ,2015 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage bv dss v gs = 0 v,i d = 25 0ua 10 0 - - v gate threshold voltage v gs(th) v ds =v gs , i d = 250 ua 2 3 4 v drain - source on - state resistance r ds(on) v gs = 10 v,i d = 3 0 a - 9 12 m dss v ds =80 v,v gs =0v - - 1.0 ua gate - source leakage current i gss v gs = + 20 v,v ds =0v - - + 100 n a dynamic (note 7 ) total gate charge q g v ds = 5 0 v, i d = 3 0 a, v gs = 10 v (note 1,2 ) - 145 - nc gate - source charge q gs - 25 - gate - drain charge q gd - 43 - input capacitance ciss v ds = 30 v, v gs = 0 v, f=1.0mhz - 3921 - pf output capacitance coss - 255 - reverse transfer capacitance crss - 9 6 - turn - on delay time td (on) v dd = 5 0 v, i d = 3 0 a, v g s = 10 v, r g = 3 (note 1,2 ) - 27 - ns turn - on rise time t r - 13 - turn - off delay time td (off) - 15 - turn - off fall time t f - 43 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 60 a diode forward voltage v sd i s = 30 a,v gs =0v - 0. 8 1. 3 v notes : 1. pulse width < 300us, duty cycle < 2% 2. essentially independent of operating temperature typical characteristics . 3. repetitive rating, pulse width limited by junction temperature t j (max)=150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. 4. the maximum current rating is package limited. 5. r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. m ount ed on a 1 inch 2 with 2oz. square pad of copper . 6. the test condition is l= 0.5 mh, i as = 2 5 a , v dd = 25 v, v gs =10v 7. guaranteed by design, not subject to product ion testing.
p p j q547 8 august 1 8 ,2015 - rev.00 page 3 t ypical characteristic curves fig.1 output characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 on - resist a nce vs. junction temperature fig. 5 on - resistance variation with vgs. fig. 6 source - drain diode forward voltage
p p j q547 8 august 1 8 ,2015 - rev.00 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 breakdown voltage variation vs. temperature fig. 9 threshold voltage variation with temperature fig. 10 capacitance vs. drain - source voltage fig. 11 maximum safe operating area
p p j q547 8 august 1 8 ,2015 - rev.00 page 5 t ypical characteristic curves fig. 12 normalized transient thermal impedance vs. pulse width
p p j q547 8 august 1 8 ,2015 - rev.00 page 6 part no packing code version packaging information & mounting pad layout dfn5060 - 8l dimension u nit: mm dfn5060 - 8l pad latout u nit: mm part n o packing code package type packing type marking ver sion pjq547 8 _r 2 _00001 dfn5060 - 8l 3000 pcs / 13
p p j q547 8 august 1 8 ,2015 - rev.00 page 7 disclaimer
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